Plasma Enhanced Chemical Vapour Deposition (PECVD) is a widely used plasma process to deposit various thin films on almost any kind of substrates (silicon, glass, polymers, steel…). Since PECVD allows deposition at low substrate temperatures and leads to films with unique properties which can not been obtained by conventional deposition techniques, it finds applications in many fields such as microelectronic, automobile, aeronautic, food packaging or biomaterial industries. This lecture is devoted to the different steps and mechanisms involved in PECVD : the fragmentation of the gaseous precursor in the plasma, the interactions between neutral active species and positive ions with the surface of the growing film (sticking, etching, recombination reactions…) and the growth of the thin film. The influence of the substrate temperature and the applied bias voltage on the growth kinetics and film microstructure will be presented and discussed. On the basis of examples, it will be shown that PECVD can lead to a wide variety of thin films, from inorganic films (such as silicon oxide or nitride films) up to organic plasma polymer films, from amorphous to polycrystalline films (such as diamond or silicon films) and even to films of oriented carbon nanotubes.
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