Plasma etching is one of the basic steps used in semiconductor processing for the fabrication of electronic devices. In micro-technology this technique is also widely used to design central
parts of MEMS and MOEMS e.g. for the fabrication of sensors, actuators,
photonics and microfluidics devices. Plasma etching processes are thus
asked to produce patterns from the nanometre to the micrometre range and
meet in each case various technological requirements, which can prove to
be severe.
The lecture will recall the basic aspects of plasma physics and
chemistry that characterises plasma etching: etch rate, selectivity,
profile control, surface damage… Focus will be set on the complexity of
the plasma phase: how the plasma interacts with the surface, how
patterning is obtained, and the role of the reactor walls. Connection
will be made with the general characteristics of the most commonly used
etching equipment: planar rf diode and high-density systems. Problems
specifically related to the processing of features with a small opening
and of high aspect ratio will be addressed.
The lecture will be illustrated through examples taken from the
literature. Etching of Si and SiO_2 will be used as textbook cases, but
attention will be paid to other materials of technological interest, as
low-k, high-k, metals, III-Vs…